Originalpublikation
Helmich, L.; Walter, D.C.; Bredemeier, D.; Schmidt, J.: Atomic-Layer-Deposited Al2O3 as Effective Barrier against the Diffusion of Hydrogen from SiNx:H Layers into Crystalline Silicon during Rapid Thermal Annealing. In: Physica Status Solidi - Rapid Research Letters 14 (2020), Nr. 12, 2000367. DOI: https://doi.org/10.1002/pssr.202000367
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| Zusammenfassung: | |
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Stacks of hydrogen-lean aluminum oxide, deposited via plasma-assisted atomic-layer-deposition, and hydrogen-rich plasma-enhanced chemical vapor-deposited silicon nitride (SiNx) are applied to tướng boron-doped float-zone silicon wafers. A rapid thermal annealing (RTA) step is performed in an infrared conveyor-belt furnace at different set-peak temperatures. The hydrogen nội dung diffused into the crystalline silicon during the RTA step is quantified by measurements of the silicon resistivity increase due to tướng hydrogen passivation of boron dopant atoms. These experiments indicate that there exists a temperature-dependent maximum in the introduced hydrogen nội dung. The exact position of this maximum depends on the composition of the SiNx layer. The highest total hydrogen nội dung, exceeding 1015 cm−3, is introduced into the silicon bulk from silicon-rich SiNx layers with a refractive index of 2.3 (at λ = 633 nm) at an RTA peak temperature of 800 °C, omitting the Al2O3 interlayer. Adding an Al2O3 interlayer with a thickness of 20 nm reduces the hydrogen nội dung by a factor of four, demonstrating that Al2O3 acts as a highly effective hydrogen diffusion barrier. Measuring the hydrogen nội dung in the silicon bulk as a function of Al2O3 thickness at different RTA peak temperatures provides the hydrogen diffusion length in Al2O3 as a function of measured temperature. |
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| Lizenzbestimmungen: | CC BY-NC-ND 4.0 Unported - https://creativecommons.org/licenses/by-nc-nd/4.0/ |
| Publikationstyp: | Article |
| Publikationsstatus: | publishedVersion |
| Erstveröffentlichung: | 2020 |
| Schlagwörter (englisch): | Alumina, Aluminum coatings, Aluminum oxide, Atomic layer deposition, Atoms, Belt conveyors, Boron, Diffusion barriers, Passivation, Pulsed laser deposition, Rapid thermal annealing, Rapid thermal processing, Refractive index, Semiconductor materials, Silicon nitride, Atomic layer deposited, Chemical vapor deposited, Crystalline silicons, Hydrogen diffusion barriers, Measured temperatures, Plasma assisted atomic layer depositions, Rapid thermal annealing (RTA), Temperature dependent, Silicon wafers, aluminum oxide, defects, diffusion, hydrogen, silicon |
| Fachliche Zuordnung (DDC): | 530 | Physik |
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Fakultät für Mathematik und Physik
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